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20250218887. Semiconductor Device (FUJI ELECTRIC ., .)

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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Abstract: provided is a semiconductor device, comprising: a switching device having a first main electrode on one surface; a connection conductor that is connected to the first main electrode of the switching device; an encapsulating portion that encapsulates a space between the switching device and the connection conductor; and an insulation layer arranged to overlap with the encapsulating portion between at least a part of the switching device and the connection conductor.

Inventor(s): Kohei YAMAUCHI, Hideki IWATA, Eiji MOCHIZUKI, Yoshitaka NISHIMURA, Yuji HAYASE, Hiroto WATANABE

CPC Classification: H01L23/3157 ({Partial encapsulation or coating (mask layer used as insulation layer )})

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