SELF-ALIGNING BACKSIDE GATE CONNECTION

Abstract: embodiments of the present disclosure relate to a method of forming a contact structure on a substrate. the method includes forming a high aspect ratio (har) feature within a substrate having a device formed thereon. the device includes a plurality of channels disposed through a polysilicon layer and extending in a first direction, and an isolation layer disposed on the substrate, the polysilicon layer separated from the isolation layer by a dielectric layer. the forming of the har feature is formed a first distance in a second direction from the plurality of channels and includes removing a portion of the isolation layer and the polysilicon layer. the method further includes etching the polysilicon layer to expose a top surface of the isolation layer that is opposite to a surface that is disposed on the surface of the substrate, and exposing a metal layer within the har feature.

Inventor(s): Ashish PAL, Gregory COSTRINI, El Mehdi BAZIZI, Veeraraghavan S. BASKER, Benjamin COLOMBEAU, Balasubramanian PRANATHARTHIHARAN

CPC Classification: H01L21/76897 ({Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step (self-aligned silicidation on field effect transistors )})

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