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20250218864. Semiconductor Dev (NANYA TECHNOLOGY)

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SEMICONDUCTOR DEVICE HAVING AT LEAST ONE AIR GAP AND METHOD FOR MANUFACTURING THE SAME

Abstract: the present application discloses a semiconductor device and a method for fabricating the same. the semiconductor device includes an upper metal line and a lower metal line. the upper metal line is disposed over the lower metal line. at least one air gap is disposed between the upper metal line and the lower metal line.

Inventor(s): YUAN-YUAN LIN

CPC Classification: H01L21/7682 (Applying interconnections to be used for carrying current between separate components within a device {comprising conductors and dielectrics})

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