PLASMA PROCESSING APPARATUS

Abstract: a plasma processing method for processing a wafer located inside a plasma processing apparatus having a lift pin disposed inside a wafer stage, the plasma processing method including setting an electrical resistance value between a direct current power source and the lower portion of the lift pin electrically connected to the direct current power source based on an electrical resistance set value between the electrostatic attraction electrode and the wafer, an electrical resistance set value between the plasma and a ground electrode of the processing chamber, and a withstand voltage set value between the plasma and the processing chamber, and adjusting a voltage value of the lower portion of the lift pin and an average value of the voltage of the electrostatic attraction electrode during the processing of the wafer to match a predicted value of a self-bias voltage of the wafer.

Inventor(s): Tomoyuki TAMURA, Kazuyuki IKENAGA

CPC Classification: H01L21/6833 (for supporting or gripping (for conveying , for positioning, orientation or alignment ))

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