SUBSTRATE PROCESSING APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM

Abstract: included is a process chamber configured to process a substrate; at least one vaporizer that vaporizes a source supplied as a liquid to generate a source gas; at least two tanks that accumulates the source gas extracted from the vaporizer; pipe coupling the at least two tanks to each other; a first valve provided in the pipe; and a gas supplier that supplies the source gas into the process chamber from the at least two tanks.

Inventor(s): Makoto HIRANO

CPC Classification: H01L21/67017 ({Apparatus for fluid treatment (, take precedence)})

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