METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS, RECORDING MEDIUM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Abstract: there is provided a technique that includes: (a) supplying a first gas containing a group xiv element to a substrate on which a film containing the group xiv element is formed such that reaction by-products generated by reaction with the group xiv element contained in the film formed on the substrate are saturated and adsorbed on the substrate; (b) supplying a second gas containing a halogen after (a); and (c) etching the film containing the group xiv element formed on the substrate by alternately repeating (a) and (b).

Inventor(s): Masato KAWANISHI, Takumi ITO, Kimihiko NAKATANI

CPC Classification: H01L21/3065 (Plasma etching; Reactive-ion etching)

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