SUBSTRATE PROCESSING METHOD

Abstract: disclosed is a substrate processing method for selectively etching a re-growth silicon oxide formed on a surface of a silicon oxide layer and having a density lower than a density of the silicon oxide layer. the method includes: (a) placing a substrate including the re-growth silicon oxide into a reaction chamber; and (b) supplying an etching gas into the reaction chamber to dry-etch the re-growth silicon oxide formed on the surface of the silicon oxide layer, wherein the dry-etching is performed using hf and ho as an etching gas at about 40� c. or lower.

Inventor(s): Bongsoo KWON, Dohyun KIM, Yuri PARK

CPC Classification: H01L21/30604 (Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers ))

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