SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS

Abstract: there is provided a technique capable of forming a sufficiently flat film. according to one aspect of the technique, there is provided a processing method including: (a) forming a metal-containing film in a reaction vessel by performing, a predetermined number of times: (a1) supplying a material gas containing metal and halogen into the reaction vessel, (a2) supplying a reducing gas into the reaction vessel while performing (a1), and (a3) supplying a reactive gas into the reaction vessel; (b) supplying a process gas into the reaction vessel so as to perform: (b-1) forming a first film on a surface of the metal-containing film; and (c) forming a metal-containing multi-layer film structure in the reaction vessel by performing (a) and (b) a predetermined number of times.

Inventor(s): Arito OGAWA, Kota KOWA

CPC Classification: H01L21/28568 (from a gas or vapour, e.g. condensation)

Search for rejections for patent application number 20250218784