METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Abstract: provided is a method of manufacturing a semiconductor device including a dielectric layer including a first surface and a second surface that is more acidic than the first surface is formed on a semiconductor pattern, a reaction inhibitor is adsorbed onto one of the first surface and the second surface through an acid-base reaction, and a target layer is selectively formed through an atomic layer deposition process on a surface, on which the reaction inhibitor is not adsorbed, among the first surface and the second surface.

Inventor(s): Eunhyoung CHO, Jeongyub LEE, Youngchul LEEM, Hanboram LEE

CPC Classification: H01L21/28562 (from a gas or vapour, e.g. condensation)

Search for rejections for patent application number 20250218782