METHOD OF FORMING SEMICONDUCTOR STRUCTURE

Abstract: a method of forming a semiconductor structure is provided. the method includes following steps. a core pattern is formed on a target layer. spacers are formed on sidewalls of the core pattern. the core pattern is removed to form an opening between the spacers. a portion of the target layer is removed by using the spacers as a mask to form a plurality of pairs of target patterns. after forming the pairs of target patterns, the spacers are removed, wherein a core opening is formed between each of pair of target patterns, and a gap opening is formed between adjacent pairs of the target patterns. a core capacitance value of corresponding target patterns on both sides of the core opening or a gap capacitance value of corresponding target patterns on both sides of the gap opening is measured to detect a structural uniformity of the core pattern.

Inventor(s): Pei-Hsiu Peng, Hung-Yu Wei

CPC Classification: H01L21/0338 ({Process specially adapted to improve the resolution of the mask})

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