METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS

Abstract: there is provided a technique that includes: (a) in a substrate with a structure where surfaces of first, second, and third materials are adjacent to one another sequentially, selectively forming first and second sacrificial films on the surfaces of the first and third materials respectively with respect to the surface of the second material; (b) forming an isolation film in a recess with the first and second sacrificial films as sidewalls; and (c) forming a first recess with one side surface of the isolation film as a sidewall and the surface of the first material as a bottom surface, and a second recess with the other side surface of the isolation film as a sidewall and the surface of the second material as a bottom surface by selectively removing the first and second sacrificial films with respect to the isolation film, the first material, and the third material.

Inventor(s): Kimihiko NAKATANI, Yoshitomo Hashimoto

CPC Classification: H01L21/02362 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (use of semiconductor devices for measuring ; resistors in general ; magnets, inductors or transformers ; capacitors in general ; electrolytic devices ; batteries or accumulators ; waveguides, resonators or lines of the waveguide type ; line connectors or current collectors ; stimulated-emission devices ; electromechanical resonators ; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers ; electric light sources in general ; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components ; use of semiconductor devices in circuits having a particular application, see the subclass for the application))

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