20250218769. Filling Method Subs (Tokyo Electron Limited)
FILLING METHOD AND SUBSTRATE PROCESSING SYSTEM
Abstract: a filling method of filling a film containing a predetermined element into a recess formed on a substrate includes (a) forming, in a first chamber, a first film, which is the film containing the predetermined element, (b) forming, in a second chamber, a modified layer by exposing the first film to gas including a halogen-containing gas, (c) forming, in the second chamber, a protective film covering the modified layer, (d) sublimating, in a third chamber, the modified layer by etching the protective film, and (e) forming, in the third chamber, a second film, which is the film containing the predetermined element.
Inventor(s): Hiroki MURAKAMI
CPC Classification: H01L21/02337 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (use of semiconductor devices for measuring ; resistors in general ; magnets, inductors or transformers ; capacitors in general ; electrolytic devices ; batteries or accumulators ; waveguides, resonators or lines of the waveguide type ; line connectors or current collectors ; stimulated-emission devices ; electromechanical resonators ; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers ; electric light sources in general ; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components ; use of semiconductor devices in circuits having a particular application, see the subclass for the application))
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