STATIC ELECTRCITY CONTROL DEVICE FOR SEMICONDUCTOR PROCESSING SYSTEM

Abstract: embodiments of the present invention relate to a technology for easily adjusting a level of static electricity required for a substrate according to a semiconductor process by injecting static electricity into the substrate or removing static electricity already formed on the substrate. a static electricity control device for injecting static electricity into a substrate disposed in a vacuum chamber or removing static electricity formed on the substrate in a semiconductor processing system, according to an embodiment, comprises: a charged particle generation unit, disposed on an upper side inside the vacuum chamber, that generates charged particles including positive ions and electrons by generating a vacuum ultraviolet ray (vuv) and reacting the vuv with a process gas inside the vacuum chamber; a grid provided with a plurality of holes, disposed on a lower side of the charged particle generation unit, that selectively pass the type of charged particles downward according to an input voltage; a substrate support, disposed below the grid and having the substrate positioned thereon, that is made of a conductive material and guides the charged particles passing through the grid toward the substrate at a predetermined density according to an input bias voltage; and a static electricity control unit that controls the static electricity of the substrate by supplying a pulsed voltage to at least one of the grid and the substrate support, wherein the grid and the substrate support are arranged so as to have a separation distance that is within four times the mean free path of the process gas according to environmental conditions of the vacuum chamber.

Inventor(s): Heung-Gyoon PARK

CPC Classification: H01J37/32697 (Gas-filled discharge tubes (heating by discharge ))

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