20250218744. Plasma Processing Appar (Tokyo Electron Limited)

PLASMA PROCESSING APPARATUS

Abstract: a plasma processing apparatus includes: a plasma process chamber; a substrate support disposed within the plasma process chamber; an antenna disposed above the plasma process chamber; a source rf signal generator configured to generate a source rf signal; a bias signal generator configured to generate a bias signal; an upper electromagnet unit including a plurality of upper annular electromagnets arranged concentrically; a sidewall electromagnet unit including a plurality of sidewall annular electromagnets; an electromagnet excitation circuit configured to supply a current to at least one of the plurality of upper annular electromagnets or the plurality of sidewall annular electromagnets; and a controller configured to adjust the current supplied to at least one of the plurality of upper annular electromagnets or the plurality of sidewall annular electromagnets to control a plasma electron density distribution in the plasma process chamber.

Inventor(s): Naoki MATSUMOTO

CPC Classification: H01J37/32669 (Gas-filled discharge tubes (heating by discharge ))

Search for rejections for patent application number 20250218744