SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND MANUFACTURING APPARATUS

Abstract: disclosed is an apparatus for processing a substrate, the apparatus including: a chamber providing a processing space; an electrode unit for generating first plasma in the processing space and having opposing electrodes; a coil unit located in an upper side of the processing space, and for generating second plasma supplied into the processing space; and a remote plasma unit for supplying radicals to the processing space.

Inventor(s): Joon Hee LEE, Ki Moon KANG, Pil Kyun HEO, Hong Chan CHO, Byeong Kwan KIM, Ji Young CHOI, Joon Ho WON

CPC Classification: H01J37/32568 (Gas-filled discharge tubes (heating by discharge ))

Search for rejections for patent application number 20250218739