SUBSTRATE PROCESSING APPARATUS

Abstract: a substrate processing apparatus includes a chamber, a dielectric window, an upper coil, and a gas distribution plate. the chamber provides a processing space for a substrate. the dielectric window is provided on an upper part of the chamber and maintains a pressure inside the chamber. the upper coil is provided on an upper part of the dielectric window and receives radio frequency (rf) power to generate plasma in the processing space. the gas distribution plate is provided on a lower part of the dielectric window and supplies main gas or reaction gas to the processing space. a flow space in which the main gas or the reaction gas flows is provided between the gas distribution plate and the dielectric window, and the main gas or the reaction gas is distributed through the flow space to be supplied to the processing space.

Inventor(s): Woo-Young CHUNG, Jong-Wook KIM, Hwan-Hee LEE, Yong-Yi YIN

CPC Classification: H01J37/32449 (Gas-filled discharge tubes (heating by discharge ))

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