DEVICE AND METHOD OF CONTROLLING PLASMA CHARACTERISTIC, AND SYSTEM FOR TREATING SUBSTRATE

Abstract: a device for controlling plasma characteristics includes one or more processors, and a storage medium storing computer-readable instructions. the computer-readable instructions, when executed by the one or more processors, are configured to cause the one or more processors to obtain an equivalent circuit viewed from a non-sinusoidal generator for applying a plasma control voltage to an electrostatic chuck provided in a processing space of a processing chamber, and to control characteristics of plasma generated in the processing space based on the equivalent circuit obtained. the characteristics of the plasma include at least one of a first sheath thickness from a substrate to the plasma and a second sheath thickness from a shower head spraying process gas into the processing space to the plasma.

Inventor(s): Dong Hun KIM, Hyun Jin KIM, Jae Hyun CHO, Beyoung Youn KOH, Jin Young KIM

CPC Classification: H01J37/32449 (Gas-filled discharge tubes (heating by discharge ))

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