CAPACITOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Abstract: disclosed is a capacitor structure including a substrate, a stack structure, and a capacitor. the stack structure includes at least one first dielectric layer and at least one second dielectric layer alternately disposed on the substrate. there is a trench in the at least one first dielectric layer, the at least one second dielectric layer, and the substrate. the trench has at least one recess on at least one sidewall of the at least one first dielectric layer. the capacitor is disposed on a surface of the trench.

Inventor(s): Yao-Hsien Chung, Fu-Yu Tsai, Bin-Siang Tsai

CPC Classification: H01G4/33 (CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric ; capacitors having potential barriers ))

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