MULTILAYERED CAPACITOR

Abstract: a multilayered capacitor according to present disclosure includes a dielectric layer including an aluminum nitride (aln)-based compound, the aluminum nitride-based compound includes aln, or a doped aln compound in which aln is doped with ni, co, mn, cr, v, zn, re, ta, nb, ti, zr, mg, sc, er, y, la, or a combination thereof, and a crystal orientation of the aluminum nitride-based compound is a c-axis crystal orientation.

Inventor(s): Tae Kyung Lee, Jehong Kyoung, Sung-Min Cho, Taejoon Park, Sehun Park, Moonchul Lee, Joung Hun Kim

CPC Classification: H01G4/1209 (CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric ; capacitors having potential barriers ))

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