TIME MULTIPLEXING OF CLEANUP AND WRITE FOR SERIAL READ WRITE MEMORY

Abstract: a static random-access memory is provided with a double-pumped operation in which a read operation to a multiplexed group of columns of bitcells may occur in a first portion of a memory clock cycle and in which a write operation to a write-selected column in the multiplexed group of columns of bitcells may occur in a second portion of the memory clock cycle. the write operation to the write-selected column occurs without any precharging of bit lines in the write-selected column during read and write operations.

Inventor(s): Pradeep RAJ, Akshdeepika LNU, Abhishek DALAL, Rahul SAHU, Sharad Kumar GUPTA, Sherin BOSE, Sakshi SINGHAL

CPC Classification: G11C11/419 (forming {static} cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger)

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