MEMORY ARRAY CONNECTIONS

Abstract: a device includes a substrate, a first sense amplifier disposed on the substrate, a first word line driver disposed on the substrate and situated adjacent the first sense amplifier in the x-direction, and a first memory array disposed above the first sense amplifier and above the first word line driver in the z-direction. a plurality of first conductive segments extend alternately in the x-direction and the y-direction, and are disposed between the first memory array and the first sense amplifier and configured to electrically connect the first sense amplifier to a first bit line of the first memory array. a plurality of second conductive segments extend alternately in the x-direction and the y-direction, and are disposed between the first memory array and the first word line driver and configured to electrically connect the first word line driver to a first word line of the first memory array.

Inventor(s): Chieh LEE, Chia-En Huang, Chun-Ying LEE, Yi-Ching LIU, Yih WANG, Hsiao Mei Tseng, Yao-Jen Yang, Jonathan Tsung-Yung Chang

CPC Classification: G11C11/4091 (Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating)

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