Charge Domain Compute-in-DRAM for Binary Neural Network

Abstract: methods and systems for computing in-dynamic random access memory (dram) computing include loading a first group of cells of the dram with input parameters and loading a second group of cells of the dram with inverted input parameters that are each complementary to corresponding input parameters. an offset group of cells of the dram is loaded with an indication of an offset voltage. an operation is performed on weights with corresponding stored input parameters or the stored inverted input parameters, and a column of the first group and the second group is activated to perform an accumulation of the operations of weights for cells in the column to store a sum. an offset voltage is generated using the indication, and an output is generated based on the comparison of the sum and the offset voltage and is stored in an output group of cells of the dram.

Inventor(s): Wenlun Zhang, Yuan He

CPC Classification: G06F3/0625 ({Power saving in storage systems})

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