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20250217043. Memory D (YANGTZE MEMORY TECHNOLOGIES ., .)

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MEMORY DEVICE, MEMORY SYSTEM AND OPERATION METHOD THEREOF, AND ELECTRONIC APPARATUS

Abstract: the present disclosure provides a memory device and an operation method thereof, a memory system and an operation method thereof, and an electronic apparatus. the memory device includes a memory array and a peripheral circuit coupled with the memory array; the peripheral circuit is configured to: in response to a characteristic parameter setting command, receive a characteristic parameter of an erased page checking operation, wherein the characteristic parameter of the erased page checking operation includes at least a read voltage compensation parameter of the erased page checking operation; and in response to an erased page checking command, perform the erased page checking operation on the memory array based on the characteristic parameter of the erased page checking operation.

Inventor(s): WenWen DONG, Yahai LIU, Lu GUO, Wei HUANG, Weijun WAN

CPC Classification: G06F3/0619 ({in relation to data integrity, e.g. data losses, bit errors})

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