STRESS LAYER MODIFICATION USING ENERGETIC BEAM PROCESSING THROUGH PHOTORESIST MASK

Abstract: a method may include providing a stress compensation stack on a main surface of the substrate, wherein the stress compensation stack comprises a patterned resist layer and a stress compensation layer, disposed subjacent the patterned resist layer. the patterned resist layer may be determined according to a surface map of the main surface of the substrate. the method may further include directing processing species to the stress compensation stack, wherein the stress compensation layer is selectively altered as a function of position across the substrate.

Inventor(s): Morgan EVANS

CPC Classification: G03F7/095 (having more than one photosensitive layer ( takes precedence))

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