PELLICLE FILM FOR PHOTOLITHOGRAPHY, PELLICLE, PHOTOLITHOGRAPHY MASK, PHOTOLITHOGRAPHY SYSTEM, AND METHOD OF PRODUCING PELLICLE FILM FOR PHOTOLITHOGRAPHY

Abstract: a pellicle film for photolithography including a carbon nanotube film, in which the carbon nanotube film contains carbon nanotubes; the carbon nanotube film transmits 80% or more of euv light at a wavelength of 13.5 nm; the carbon nanotube film has a thickness from 1 nm to 50 nm; the carbon nanotube film is deposited on a silicon substrate, in which the 3� of the reflectance is 15% or less when the reflectance of the deposited carbon nanotube film is measured using a reflectance spectrophotometer-based film thickness meter under the following conditions: the diameter of measurement spots, 20 �m; the reference measurement wavelength, 285 nm; the number of measurement spots, 121 spots; the distance between the centers of adjacent measurement spots, 40 �m.

Inventor(s): Yousuke ONO, Hisako ISHIKAWA, Ryohei OGAWA, Atsushi OKUBO, Kazuo KOHMURA, Atsuko SEKIGUCHI, Yuichi KATO, Takeo YAMADA, Ying ZHOU

CPC Classification: G03F1/62 (PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices ; photosensitive materials or processes for photographic purposes ; electrophotography, sensitive layers or processes therefor ))

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