SILICON PHOTONIC INTEGRATED CIRCUITS WITH LOCALIZED THICK BURIED INSULATOR

Abstract: a silicon photonic (siph) integrated circuit on a substrate comprising a buried insulator layer of varying thickness between an optical waveguide and an underlying silicon layer. the insulator layer has a first thickness under a first length of the waveguide and a second, greater, thickness under a second length of the waveguide. buried insulator layer thickness may be thinner where an optical mode is to be more confined during operation of the siph ic, and buried insulator layer thickness may be greater within localized regions where optical mode is to expand during operation of the siph ic. accordingly, a transfer of optical energy to an underlying silicon layer of the substrate may be curtailed within one substrate region without impeding the transfer of thermal energy to the underlying silicon layer within another substrate region.

Inventor(s): Harel Frish, Banaful Paul, Kelly Magruder, Eddie Bononcini, John Heck

CPC Classification: G02B6/12004 (of the integrated circuit kind (electric integrated circuits ))

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