METHOD AND DEVICE OF INSPECTING SURFACE OF INTERCONNECT STRUCTURE

Abstract: a method and device of inspecting a surface of an interconnect structure are provided. the interconnect structure includes a first metal layer, second metal layer, and dielectric layer enclosing the second metal layer. the first metal layer and dielectric layer are disposed above the second metal layer. at least one portion of the first metal layer is exposed from the surface of the interconnect structure. the method includes: illuminating a surface of an interconnect structure by an incident light having a first polarization state; receiving light signals reflected from the interconnect structure and having a second polarization state different from the first polarization state; and determining a planar pattern of the first metal layer by differentiating between at least one light signal reflected from the first metal layer and at least one light signal reflected from the second metal layer according to intensity differences between the light signals.

Inventor(s): CHIN-YU LIU, CHIH-YUAN LIN, HUNG-CHUN LO, CHAO-YU HUANG, CHUN-PIN HSU, CHENG-TAO TSAI

CPC Classification: G01N21/9501 ({Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step )})

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