GROUP III NITRIDE STACK AND METHOD OF MANUFACTURING GROUP III NITRIDE STACK

Abstract: this group iii nitride stack includes a sic substrate and a stack structure provided on the sic substrate and formed by epitaxially growing a group iii nitride crystal, wherein the stack structure has an average density of surface defects of 10.0 defects/cmor less in an internal region of a surface of the stack structure, the surface defects each having a size of 0.165 �m or more and 2.0 �m or less, the internal region being a region excluding a width of 5 mm from an outer edge of the surface of the stack structure, and when the internal region is segmented into a plurality of 10 mm-square region segments and a density of the surface defects in each region segment is measured, the maximum value of the density is 50.0 defects/cmor less.

Inventor(s): Taiki YAMAMOTO, Hiroyuki TOMIOKA

CPC Classification: C30B29/40 (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, ); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys ); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices ; working of plastics ; modifying the physical structure of metals or alloys , ); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof , ); APPARATUS THEREFOR)

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