SiC INGOT AND METHOD FOR MANUFACTURING SiC SUBSTRATE

Abstract: this sic ingot includes a facet, wherein, when a diameter of the sic ingot is represented as d and in a plan view in a crystal growth direction, a virtual rectangle that surrounds the facet with a minimum area and has a first side parallel to a <11-20>direction and a second side parallel to a <1-100>direction is drawn, and a length of the first side of the virtual rectangle is represented as lx, lx/d<0.3 is satisfied at a first end which is a terminal of the crystal growth direction.

Inventor(s): Yukio NAGAHATA

CPC Classification: C30B29/36 (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, ); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys ); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices ; working of plastics ; modifying the physical structure of metals or alloys , ); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof , ); APPARATUS THEREFOR)

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