SiC INGOT AND METHOD FOR MANUFACTURING SiC SUBSTRATE

Abstract: this sic ingot includes a step-flow growth region and a facet, in a cut surface that passes through a center and is in a <11-20> direction, an inner boundary between the facet and the step-flow growth region has a first inclined surface inclined in a [−1-120] direction with respect to a crystal growth direction and a second inclined surface inclined in a [11-20] direction with respect to the crystal growth direction, and an inflection point between the first inclined surface and the second inclined surface is located on a side of a first end, which is a si plane or a plane inclined by an offset angle from the si plane, from a center position of an ingot length.

Inventor(s): Shunsuke NOGUCHI

CPC Classification: C30B29/36 (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, ); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys ); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices ; working of plastics ; modifying the physical structure of metals or alloys , ); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof , ); APPARATUS THEREFOR)

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