ETCHING COMPOSITION, METHOD OF ETCHING METAL-CONTAINING LAYER USING THE SAME AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

Abstract: provided are an etching composition including a hypervalent iodine-containing compound, a method of etching a metal-containing layer by using the same, and a method of manufacturing a semiconductor device by using the same.

Inventor(s): Byungjoon KANG, Sungmin KIM, Insun PARK, Minjae SUNG, Sabyuk YANG, Jungmin OH, Kum Hee LEE, Cheol HAM, Kyuyoung HWANG

CPC Classification: C23F1/26 (NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE (working metal by laser beams ; desurfacing by applying flames ; working of metal by electro-erosion ; producing decorative effects by removing surface material, e.g. by engraving, by etching, ; electrolytic etching or polishing ); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS AND AT LEAST ONE PROCESS COVERED BY SUBCLASS OR OR CLASS)

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