SEMICONDUCTOR TREATMENT LIQUID FOR REMOVING RUTHENIUM SILICIDE

Abstract: a semiconductor treatment liquid for removing ruthenium silicide from a substrate containing ruthenium silicide, the semiconductor treatment liquid for ruthenium silicide removal containing (i) at least one selected from the group consisting of hypochlorous acid, hypobromous acid, periodic acid, and ions thereof, (ii) at least one selected from the group consisting of hydrogen fluoride and a fluoride ion, and (iii) an onium ion.

Inventor(s): Yuzan SUZUKI, Yuki KIKKAWA

CPC Classification: C23F1/26 (NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE (working metal by laser beams ; desurfacing by applying flames ; working of metal by electro-erosion ; producing decorative effects by removing surface material, e.g. by engraving, by etching, ; electrolytic etching or polishing ); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS AND AT LEAST ONE PROCESS COVERED BY SUBCLASS OR OR CLASS)

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