Substrate Processing Apparatus, Gas Supply Assembly, Substrate Processing Method, Method of Manufacturing Semiconductor Device and Non-transitory Computer-Readable Recording Medium

Abstract: for reducing a risk of oxygen permeation, there is provided a technique that includes: a first gas supplier supplying a first gas; a first structure allowing the first gas to pass therethrough from the first gas supplier; a second structure allowing the first gas to pass therethrough from the first structure; a third structure allowing the first gas to pass therethrough from the second structure; a process chamber to which the first gas is supplied from the third structure; a first seal between the first structure and the second structure; a second seal between the second structure and the third structure; a second gas supplier supplying a second gas; a first gas path arranged along the second seal to allow the second gas to pass therethrough; and a second gas path arranged along the first seal to allow the second gas to pass therethrough.

Inventor(s): Yusaku OKAJIMA, Takatomo YAMAGUCHI, Yuji TAKEBAYASHI, Hiroki HATTA

CPC Classification: C23C16/45561 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion ; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. , ; metallising of glass ; metallising mortars, concrete, artificial stone, ceramics or natural stone ; enamelling of, or applying a vitreous layer to, metals ; treating metal surfaces or coating of metals by electrolysis or electrophoresis ; single-crystal film growth ; by metallising textiles ; decorating textiles by locally metallising ))

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