SUBSTRATE PROCESSING APPARATUS, NOZZLE, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM

Abstract: there is provided a technique that includes: a process chamber in which at least one substrate is processed; at least one nozzle including a plurality of gas introduction passages configured to introduce a gas and a fluid communication portion configured to partially bring the plurality of gas introduction passages into fluid communication with each other; and a plurality of gas suppliers configured to supply the gas to the plurality of gas introduction passages.

Inventor(s): Yusaku OKAJIMA

CPC Classification: C23C16/45561 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion ; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. , ; metallising of glass ; metallising mortars, concrete, artificial stone, ceramics or natural stone ; enamelling of, or applying a vitreous layer to, metals ; treating metal surfaces or coating of metals by electrolysis or electrophoresis ; single-crystal film growth ; by metallising textiles ; decorating textiles by locally metallising ))

Search for rejections for patent application number 20250215567