METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

Abstract: there is provided a technique that includes: performing a cycle a predetermined number of times on the substrate, the cycle including sequentially performing: (a) supplying a first modifying gas, which is an inorganic halogen element-containing gas; (b) supplying a precursor gas; (c) supplying a second modifying gas, which is an inorganic halogen element-containing gas; and (d) supplying a reaction gas.

Inventor(s): Arito OGAWA, Atsuro SEINO

CPC Classification: C23C16/45527 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion ; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. , ; metallising of glass ; metallising mortars, concrete, artificial stone, ceramics or natural stone ; enamelling of, or applying a vitreous layer to, metals ; treating metal surfaces or coating of metals by electrolysis or electrophoresis ; single-crystal film growth ; by metallising textiles ; decorating textiles by locally metallising ))

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