METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

Abstract: there is provided a technique that includes: (a) supplying a first processing gas to a substrate; (b) storing a second processing gas in a first reservoir while heating the second processing gas; (c) storing the second processing gas in a second reservoir different from the first reservoir while heating the second processing gas; (d) after (b), supplying the second processing gas from the first reservoir to the substrate; (e) after (c), supplying the second processing gas from the second reservoir to the substrate, (f) performing (a) and (d); (g) performing (a) and (e); and (h) forming a film on the substrate by performing a cycle that includes (f) and (g) a predetermined number of times.

Inventor(s): Takashi YOKOGAWA

CPC Classification: C23C16/45527 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion ; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. , ; metallising of glass ; metallising mortars, concrete, artificial stone, ceramics or natural stone ; enamelling of, or applying a vitreous layer to, metals ; treating metal surfaces or coating of metals by electrolysis or electrophoresis ; single-crystal film growth ; by metallising textiles ; decorating textiles by locally metallising ))

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