METHODS AND ASSEMBLIES FOR SELECTIVE DEPOSITION OF METAL-CONTAINING MATERIAL

Abstract: the current disclosure relates to methods and assemblies for selectively depositing metal-containing materials, such as metal oxides, on different surfaces of a semiconductor substrate by cyclic vapor deposition techniques, including atomic layer deposition. the metal-containing material is deposited using a metal precursor having a metal atom bound to an acetamidinato ligand, such as dialkylacetamidinato ligand. the metal-containing material may be deposited on a metal surface relative to a dielectric surface, or to a dielectric surface relative to a metal surface, depending on the process flow. the current disclosure further relates to layers, structures and semiconductor devices deposited according to the methods disclosed herein, as well as to semiconductor processing assemblies configured and arranged to perform said methods.

Inventor(s): Saima Ali, Bhagyesh Purohit, Eva E. Tois, Marko Tuominen, Yu Xu, Charles Dezelah

CPC Classification: C23C16/04 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion ; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. , ; metallising of glass ; metallising mortars, concrete, artificial stone, ceramics or natural stone ; enamelling of, or applying a vitreous layer to, metals ; treating metal surfaces or coating of metals by electrolysis or electrophoresis ; single-crystal film growth ; by metallising textiles ; decorating textiles by locally metallising ))

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