SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS

Abstract: it is possible to improve a quality of a film formed on a substrate. there is provided a technique that includes: forming a film containing a first element on a substrate by performing a cycle a predetermined number of times, wherein the cycle includes: (a) supplying a source gas containing the first element and an organic ligand to the substrate; (b) supplying a treatment gas to the substrate to reduce an amount of by-products present on a surface of the substrate; and (c) supplying a first reactive gas to the substrate.

Inventor(s): Arito OGAWA

CPC Classification: C23C16/0227 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion ; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. , ; metallising of glass ; metallising mortars, concrete, artificial stone, ceramics or natural stone ; enamelling of, or applying a vitreous layer to, metals ; treating metal surfaces or coating of metals by electrolysis or electrophoresis ; single-crystal film growth ; by metallising textiles ; decorating textiles by locally metallising ))

Search for rejections for patent application number 20250215553