COMPOSITIONS AND METHODS FOR TUNGSTEN ETCHING INHIBITION

Abstract: the presently claimed invention relates to dielectric polishing composition and methods thereof. the presently claimed invention particularly relates to a composition comprising: (a) surface-modified colloidal silica particles comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of from 60 nm to 200 nm, and a zeta potential <−35 mv at a ph in the range of from ≥2.0 to ≤4.5; (b) first corrosion inhibitor selected from at least one guanidine derivative; (c) second corrosion inhibitor selected from polyacrylamides or polyacrylamide copolymers; (d) at least one iron (iii) oxidizer; (e) at least one silicon oxide removal rate enhancer selected from phosphoric acid and salts thereof; (f) at least one stabilizer; and (g) an aqueous medium, wherein the ph of the composition is in the range of from ≥2.0 to ≤4.5.

Inventor(s): Ching Hsun CHAO, Yong Yu CHEN, Tsung Yu TSAI, Michael LAUTER, Te Yu WEI

CPC Classification: C09G1/02 (POLISHING COMPOSITIONS (French polish ); SKI WAXES)

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