GROUP III NITRIDE LAMINATE AND METHOD OF PRODUCING GROUP III NITRIDE LAMINATE

Abstract: a group iii nitride laminate, including: an underlying substrate; a first layer which is provided on the underlying substrate and contains aluminum nitride; and a second layer which is provided on the first layer and contains gallium nitride, wherein the thickness of the first layer is 11.0 nm or more, and in a region corresponding to a thickness of the first layer, an aln abundance ratio, which is a ratio of the amount of the aluminum nitride to the total amount of the aluminum nitride and the gallium nitride is less than 78%.

Inventor(s): Taiki YAMAMOTO

CPC Classification: C30B29/68 (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, ); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys ); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices ; working of plastics ; modifying the physical structure of metals or alloys , ); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof , ); APPARATUS THEREFOR)

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