FILM FORMATION METHOD AND FILM FORMATION DEVICE

Abstract: a film forming method includes (a) to (e) below. (a) a substrate having a first film and a second film in different regions of a surface of the substrate is prepared. (b) a self-assembled monolayer is selectively formed on a surface of the second film using an organic compound not containing fluorine. (c) after (b), a target film is formed on a surface of the first film while inhibiting the target film from being formed on the surface of the second film using the self-assembled monolayer. (d) after (c), a partial portion of the target film is fluorinated faster than a remaining portion of the target film using a fluorine-containing gas. (e) after (d), the partial portion of the target film is etched faster than the remaining portion of the target film using an etching gas. the partial portion of the target film is deposited on the self-assembled monolayer.

Inventor(s): Shuji AZUMO, Yumiko KAWANO, Shinichi IKE

CPC Classification: C23C16/042 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion ; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. , ; metallising of glass ; metallising mortars, concrete, artificial stone, ceramics or natural stone ; enamelling of, or applying a vitreous layer to, metals ; treating metal surfaces or coating of metals by electrolysis or electrophoresis ; single-crystal film growth ; by metallising textiles ; decorating textiles by locally metallising ))

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