20250205821. Processing Method Si (GlobalWafers ., .)
PROCESSING METHOD OF SINGLE CRYSTAL MATERIAL AND PROCESSING OBJECT
Abstract: a processing method of a single crystal material includes following steps. a single crystal material is provide as an object to be modified. a first laser beam is irradiated on a first surface of the object to be modified, so as to form a modification layer inside the object to be modified. the first water column and a second laser beam transmitted in the first water column are synchronously impacted and irradiated on a first side surface of the object to be modified, so as to form a first notch on the first side surface, wherein the first notch corresponds to the modification layer. in addition, a processing object is also provided.
Inventor(s): Chien Chung Lee, Bo-Kai Wang, Ying-Ru Shih
CPC Classification: B23K26/362 (Removing material (, take precedence))
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