AREA-SELECTIVE DEPOSITION USING DIAZIRINES OR DIAZO COMPOUNDS AS OVERLAYER

Abstract: a method for forming an inhibitor layer on a transition metal surface is provided. the method includes introducing diazo compounds to bind to atoms of the transition metal surface, dosing a monomer to initiate polymerization for building up the inhibitor layer, depositing material onto a growth area adjacent to the transition metal surface and etching the inhibitor layer following completion of the depositing of the material onto the growth area.

Inventor(s): Ishwar Singh, Rudy J. Wojtecki

CPC Classification: B01L3/502715 ({characterised by interfacing components, e.g. fluidic, electrical, optical or mechanical interfaces})

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