METHOD FOR SUPPRESSING FORMATION OF STACKING FAULT, STRUCTURE PRODUCED BY THIS METHOD, AND METHOD FOR EVALUATING AFFECTED LAYER

Abstract: the problem to be solved is to provide a new technology capable of suppressing the formation of stacking faults. the problem to be solved is to provide a new technology capable of suppressing stacking defects formed during epitaxial growth on a semiconductor substrate. the present invention is a method for suppressing formation of stacking faults, comprising a subsurface damaged layer removal step s of removing a subsurface damaged layer of a semiconductor substrate , a crystal growth step s of performing crystal growth on a surface from which the subsurface damaged layer is removed.

Inventor(s): Tadaaki KANEKO, Daichi DOJIMA, Kohei TODA, Jun SASAKI, Kiyoshi KOJIMA

CPC Classification: C30B25/186 (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, ); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys ); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices ; working of plastics ; modifying the physical structure of metals or alloys , ); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof , ); APPARATUS THEREFOR)

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