SINTERED BODY, SPUTTERING TARGET, OXIDE THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC EQUIPMENT, AND METHOD FOR PRODUCING SINTERED BODY

Abstract: a sintered body of an oxide contains an in element, a ga element, and an al element, in which an atomic composition ratio of the in element and an atomic composition ratio of the al element respectively satisfy a formula (1) and a formula (2) below,

Inventor(s): Emi KAWASHIMA, Mami ITOSE, Akira KAIJO, Kazuyoshi INOUE, Nobuhiro IWASE

CPC Classification: C23C14/3414 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion ; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. , ; metallising of glass ; metallising mortars, concrete, artificial stone, ceramics or natural stone ; enamelling of, or applying a vitreous layer to, metals ; treating metal surfaces or coating of metals by electrolysis or electrophoresis ; single-crystal film growth ; by metallising textiles ; decorating textiles by locally metallising ))

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