PHASE-CHANGE MEMORY CELL WITH SIDEWALL OUTER CONTACT

Abstract: a phase-change memory device is disclosed. the phase-change memory device includes a heater electrode having an uppermost surface. the phase-change memory device further includes a phase-change layer having a lowermost surface in direct contact with the uppermost surface of the heater electrode at a first location. the phase-change memory device further includes an outer electrode contact arm in direct contact with the phase-change layer at a second location that is spaced apart from the first location such that current flows through the phase-change layer from the first location to the second location. the outer electrode contact arm has a lowermost surface that is coplanar with the lowermost surface of the phase-change layer.

Inventor(s): Timothy Mathew Philip, JIN PING HAN, Ching-Tzu Chen, Kevin W. Brew, Guy M. Cohen

CPC Classification: H10N70/8413 ()

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