LED ARRAY WITH CONTINUOUS SEMICONDUCTOR LAYER

Abstract: an n-doped semiconductor layer spans multiple leds of an array, in some cases the entire array. corresponding p-contacts are localized on the p-doped semiconductor layer of each led to only a central region of that led and are electrically isolated from the p-contacts of adjacent leds. corresponding n-contacts (i) are localized to only peripheral regions of the corresponding leds, (ii) extend through the p-doped layers and the active regions of adjacent leds to make contact with the continuous n-doped layer, and (iii) are electrically isolated from those p-doped layers and active regions. in some cases the nonzero combined thickness of the n-doped layer, p-doped layer, and the active region can be less than 5 �m.

Inventor(s): Antonio LOPEZ-JULIA, Erik YOUNG

CPC Classification: H10H20/857 (No explanation available)

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