IMAGE SENSOR AND ELECTRONIC DEVICE

Abstract: an image sensor includes a semiconductor substrate including a plurality of photodiodes, a color filter layer on the semiconductor substrate and including a plurality of color filters arranged along an in-plane direction of the semiconductor substrate, and an organic intermediate layer between the semiconductor substrate and the color filter layer and including a singlet fission material. an extinction coefficient of the organic intermediate layer at a maximum absorption wavelength is greater than or equal to 1�10cm, and a singlet fission efficiency of the organic intermediate layer is greater than 50%.

Inventor(s): Feifei FANG, Sungyoung YUN, Juhyung LIM, Hyeong-Ju KIM, Kyung Bae PARK, Jeong Il PARK, Hiromasa SHIBUYA, Jeoung In YI, Younhee LIM, Tae Jin CHOI, Hyerim HONG

CPC Classification: H10F39/8053 (No explanation available)

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