20250185376. Fully Depleted Semic (GlobalFoundries U.S. .)
FULLY DEPLETED SEMICONDUCTOR-ON-INSULATOR SWITCH WITH BUILT-IN ELECTROSTATIC DISCHARGE PROTECTION
Abstract: a disclosed semiconductor structure includes a semiconductor layer including a switch area with side-by-side first and second portions and an rf switch with built-in esd/power surge protection. the rf switch includes series-connected transistors, which include, within the first portion of the switch area, source/drain regions and channel regions positioned laterally between the source/drain regions; and parallel gates adjacent to the channel regions, respectively, and traversing the first portion of the switch area without extending further onto the second portion. outer source/drain regions are silicided and contacted, whereas inner source/drain regions are unsilicided and uncontacted. the second portion of the switch area is in contact with the source/drain regions in the first area, is unsilicided, and is either undoped or low doped. thus, the second portion makes up resistive elements connected in parallel to the series-connected transistors.
Inventor(s): Alain F. Loiseau, Zhixing Zhao, Guoqing Deng, Andreas Knorr, Richard F. Taylor, III, Souvick Mitra, Randy L. Wolf
CPC Classification: H10D89/811 (No explanation available)
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- Patent Applications
- GlobalFoundries U.S. Inc.
- CPC H10D89/811
- Alain F. Loiseau of Williston VT US
- Zhixing Zhao of Nanjing CN
- Guoqing Deng of Waltham MA US
- Andreas Knorr of Saratoga Springs NY US
- Richard F. Taylor, III of Campbell CA US
- Souvick Mitra of Essex Junction VT US
- Randy L. Wolf of Essex Junction VT US