Transistors with Different Drive Current Characteristics in Semiconductor Devices

Abstract: a semiconductor device and a method of fabricating the semiconductor device are disclosed. the semiconductor device includes first and second dummy epitaxial layers disposed in first and second base structures, first and second active epitaxial layers disposed on the first and second dummy epitaxial layers, a first active nanostructured layer disposed adjacent to and in contact with the first active epitaxial layer, a second active nanostructured layer disposed adjacent to and in contact with the second active epitaxial layer, a dummy nanostructured layer disposed adjacent to and in contact with the second dummy epitaxial layer, a first gate structure surrounding the first active nanostructured layer, and a second gate structure surrounding the second active nanostructured layer and the dummy nanostructured layer.

Inventor(s): Sheng-Tsung Wang, Chun-Yuan Chen, Huan-Chieh Su, Lo-Heng Chang, Kuo-Cheng Chiang, Chih-Hao Wang

CPC Classification: H10D84/83 (No explanation available)

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